Note: This is an archived Handbook entry from 2011.
|Dates & Locations:|| |
This subject is not offered in 2011.
|Time Commitment:||Contact Hours: 1 two hour lecture per week |
Total Time Commitment: 120 hours
|Recommended Background Knowledge:|| Basic knowledge and understanding of electronics |
|Non Allowed Subjects:||None|
|Core Participation Requirements:||For the purposes of considering request for Reasonable Adjustments under the Disability Standards for Education (Cwth 2005), and Students Experiencing Academic Disadvantage Policy, academic requirements for this subject are articulated in the Subject Description, Subject Objectives, Generic Skills and Assessment Requirements of this entry. The University is dedicated to provide support to those with special requirements. Further details on the disability support scheme can be found at the Disability Liaison Unit website: http://www.services.unimelb.edu.au/disability/ |
Prof Stan Skafidas
|Subject Overview:||Transistors (NMOS, PMOS), Double Gate Transistors, FinFET and Varactors and other active devices are the building blocks of microelectronic and nano-electronic CMOS. This subject will provide the student with the latest models of these devices operating in the multi-gigahertz and sub-threshold regions. Students will be able to design and analyse simple circuits using these models. |
|Objectives:||Upon successful completion of this subject students should be able to: |
|Breadth Options:|| |
This subject is not available as a breadth subject.
|Fees Information:||Subject EFTSL, Level, Discipline & Census Date|
Master of Nanoelectronic Engineering |
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