Note: This is an archived Handbook entry from 2008.Search for this in the current handbook
|Dates & Locations:|| |
This subject has the following teaching availabilities in 2008:Semester 2, - Taught on campus.
Timetable can be viewed here. For information about these dates, click here.
|Time Commitment:||Contact Hours: Twenty-four hours of lectures, 12 hours of tutorials and 12 hours of laboratory work |
Total Time Commitment: Not available
|Prerequisites:||431-210 Electrical Circuits 2, 640-141 Physics A, 640-142 Physics B (or equivalent)|
|Recommended Background Knowledge:||None|
|Non Allowed Subjects:||None|
|Core Participation Requirements:||
For the purposes of considering request for Reasonable Adjustments under the Disability Standards for Education (Cwth 2005), and Student Support and Engagement Policy, academic requirements for this subject are articulated in the Subject Overview, Learning Outcomes, Assessment and Generic Skills sections of this entry.
It is University policy to take all reasonable steps to minimise the impact of disability upon academic study, and reasonable adjustments will be made to enhance a student's participation in the University's programs. Students who feel their disability may impact on meeting the requirements of this subject are encouraged to discuss this matter with a Faculty Student Adviser and Student Equity and Disability Support: http://services.unimelb.edu.au/disability
|Subject Overview:|| |
Students completing this subject will be able to analyse and design simple active electronic circuits and understand the principles and operation of the semiconductor devices used in them.
Topics include: amplifier concepts and characteristics (gain, impedance, bandwidth); amplifier types and circuit models (eg. voltage, transimpedance); cascaded amplifiers; omamp circuits (incl. effect of finite open-loop gain); basic semiconductor concepts (valence and conduction bands, conductors, insulators and semiconductors); carrier transport in semiconductors (electrons and holes, drift and diffusion, recombination - direct and indirect); doping of semiconductors; p-n junction under forward- and reverse- bias (current-voltage characteristic); p-n junction capactitance: diodes; diode basis circuit analysis (load line, constant voltage drop, small-signal model); diode circuits (rectification, limiting); zener diode (principle, characteristic, design of voltage reference); light omitting diodes (principle, biasing); MOSFET (enhancement) BJT transistor devices and circuits (device structure, operation, large signal characteristics, operation as a switch, biasing, small-signal characteristics and circuit model, single-stage common source/emmitter amplifier circuit analysis and design, low-frequency amplifier response, followers); linear voltage regulation (principle, example, current limiting); fixed voltage regulators; power supply decoupling; dc-dc converters (principles, step-up, step-down); heat and power design (heat sinking, thermal resistance).
|Assessment:||One written 3-hour examination (60%), practice problems (10%), test (5%), laboratories (20%) and assignment (5%).|
|Recommended Texts:|| |
Information Not Available
|Breadth Options:|| |
This subject is not available as a breadth subject.
|Fees Information:||Subject EFTSL, Level, Discipline & Census Date|
|Generic Skills:|| |
Bachelor of Engineering (Computer Engineering) |
Bachelor of Engineering (Electrical Engineering)
Bachelor of Engineering (EngineeringManagement) Computer
Bachelor of Engineering (EngineeringManagement) Electrical
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